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작성일 : 17-12-06 22:57
[한국전자통신연구원] 실리콘-화합물 융합 반도체 소자 기술동향
 글쓴이 : 테크포럼
 
- 서론
- 실리콘-화합물 융합 반도체 소자 기술
- 결론

초록
In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.



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